STP45N10 STP45N10fi n - channel 100v - 0.027 w - 45a - to-220/to-220fi power mos transistor n typical r ds(on) = 0.027 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization applications n high current, high speed switching n solenoid and relay drivers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lamp drivers. etc.) ? internal schematic diagram absolute maximum ratings symbol parameter value unit STP45N10 STP45N10fi v ds drain-source voltage (v gs = 0) 100 v v dgr drain- gate voltage (r gs = 20 k w ) 100 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 o c4524a i d drain current (continuous) at t c = 100 o c3217a i dm ( ) drain current (pulsed) 180 180 a p tot total dissipation at t c = 25 o c15045w derating factor 1 0.3 w/ o c v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c type v dss r ds(on) i d STP45N10 STP45N10fi 100 v 100 v < 0.035 w < 0.035 w 45 a 24 a june 1998 1 2 3 to-220 isowatt220 1 2 3 1/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
thermal data to220 isowatt220 r thj-case thermal resistance junction-case max 1 3.33 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 45 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 400 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 v ds = max rating x 0.8 t c = 125 o c 10 1 50 m a m a i gss gate-source leakage current (v ds = 0) v gs = 20 v 100 ma on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 22.5 a v gs = 10 v i d = 22.5 a t c = 100 o c 0.027 0.035 0.07 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 45 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 22.5 a 20 40 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 4100 600 150 5200 800 220 pf pf pf STP45N10/fi 2/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 50 v i d = 22.5 a r g = 4.7 w v gs = 10 v 25 75 35 105 ns ns (di/dt) on turn-on current slope v dd = 80 v i d = 45 a r g = 47 w v gs = 10 v 400 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v i d =45 a v gs = 10 v 120 20 50 170 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 80 v i d = 45 a r g = 4.7 w v gs = 10 v 30 35 65 45 50 95 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 45 180 a a v sd ( * ) forward on voltage i sd = 45 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 200 0.14 14 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for to-220 safe operating area for isowatt220 STP45N10/fi 3/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
thermal impedance for to-220 derating curve for to-220 output characteristics thermal impedance for isowatt220 derating curve for isowatt220 transfer characteristics STP45N10/fi 4/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
transconductance gate charge vs gate-source voltage normalized gate threshold voltage vs temperature static drain-source on resistance capacitance variations normalized on resistance vs temperature STP45N10/fi 5/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
turn-on current slope cross-over time accidental overload area turn-off drain-source voltage slope switching safe operating area source-drain diode forward characteristics STP45N10/fi 6/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STP45N10/fi 7/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP45N10/fi 8/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g STP45N10/fi 9/10 www.datasheet www.datasheet www.datasheet www.datasheet 4u 4u4u 4u .com .com .com .com 4 .com u datasheet
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